Part Number Hot Search : 
SMBJ14 M514260 D341818 NT91214 3296Y101 SMBJ14 MIP2E2D FST16
Product Description
Full Text Search
 

To Download MAC16HCDG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 MAC16HCD, MAC16HCM, MAC16HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full-wave, silicon gate-controlled devices are needed.
Features http://onsemi.com
* * * * * * * *
High Commutating di/dt and High Immunity to dv/dt @ 125C Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 Blocking Voltage to 800 Volts On-State Current Rating of 16 Amperes RMS at 80C High Surge Current Capability - 150 Amperes Industry Standard TO-220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Pb-Free Packages are Available*
TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MT2 G MT1
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16HCD MAC16HCM MAC16HCN On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz; TC = 80C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width 1.0 ms, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) 16 A Value Unit V 1 2 TO-220AB CASE 221A-09 STYLE 4 x A Y WW G = D, M, or N = Assembly Location = Year = Work Week = Pb-Free Package MAC16HCxG AYWW
3
ITSM I2t PGM PG(AV) TJ Tstg
150 93 20 0.5 -40 to +125 -40 to +150
A A2sec W W C C 1 2 3 4
PIN ASSIGNMENT
Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device MAC16HCD MAC16HCDG MAC16HCM MAC16HCMG MAC16HCN MAC16HCNG Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2005
1
December, 2005 - Rev. 1
Publication Order Number: MAC16HC/D
MAC16HCD, MAC16HCM, MAC16HCN
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit C/W C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM, Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = "21 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = "150 mA) Latch Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/ms, CL = 10 mF Gate Open, TJ = 125C, f = 250 Hz, with Snubber) LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz 2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (di/dt)c 15 - - A/ms VTM IGT 10 10 10 IH IL - - - VGT 0.5 0.5 0.5 0.80 0.73 0.82 1.5 1.5 1.5 33 36 33 60 80 60 V - 16 18 22 20 50 50 50 50 mA mA - - 1.6 V mA TJ = 25C TJ = 125C IDRM, IRRM - - - - 0.01 2.0 mA Symbol Min Typ Max Unit
dv/dt di/dt
750 -
- -
- 10
V/ms A/ms
http://onsemi.com
2
MAC16HCD, MAC16HCM, MAC16HCN
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 - IH VTM IRRM at VRRM on state IH
VTM
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT - (-) MT2 (-) MT2
+ IGT
Quadrant III
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
- MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
MAC16HCD, MAC16HCM, MAC16HCN
100 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) Q3 Q2 Q1 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 Q1 Q2 Q3
10
1 -40 -25 -10
5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C)
110
125
Figure 1. Typical Gate Trigger Current versus Junction Temperature
100 100
Figure 2. Typical Gate Trigger Voltage versus Junction Temperature
LATCHING CURRENT (mA)
HOLDING CURRENT (mA)
MT2 NEGATIVE
Q2 Q1 10 Q3
10 MT2 POSITIVE
1 -40 -25 -10
5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C)
110
125
1 -40 -25 -10
5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C)
110 125
Figure 3. Typical Holding Current versus Junction Temperature
125 120 TC, CASE TEMPERATURE ( C) 115 110 105 100 95 90 85 80 75 70 120 180 DC 60, 30 90 P(AV), AVERAGE POWER DISSIPATION (WATTS) 24 22 20 18 16 14 12 10 8 6 4 2 0
Figure 4. Typical Latching Current versus Junction Temperature
180 120
DC
60 30
90
0
2
4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP)
14
16
0
2
4 6 8 10 12 14 IT(AV), AVERAGE ON-STATE CURRENT (AMP)
16
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
http://onsemi.com
4
MAC16HCD, MAC16HCM, MAC16HCN
I T, INSTANTANEOUS ON-STATE CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 TYPICAL @ TJ = 25C 1
MAXIMUM @ TJ = 125C
10
0.1
1
MAXIMUM @ TJ = 25C
0.01
0.1
1
10 100 t, TIME (ms)
1000
10000
Figure 8. Typical Thermal Response
0.1 0 0.5 1 1.5 2 2.5 3 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3.5
Figure 7. Typical On-State Characteristics
http://onsemi.com
5
MAC16HCD, MAC16HCM, MAC16HCN
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 4: PIN 1. 2. 3. 4.
MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
6
MAC16HC/D


▲Up To Search▲   

 
Price & Availability of MAC16HCDG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X